Datasheet | Image | Part Number | Manufacturers | Stock | Quantity | Description |
---|---|---|---|---|---|---|
BLM8G0710S-30PBY | Ampleon USA Inc. | 5000 |
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RF FET LDMOS 65V 35DB SOT12112 | ||
AFV121KHR5 | NXP USA Inc. | 5000 |
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IC TRANS RF LDMOS | ||
MMRF1007HR5 | NXP USA Inc. | 5000 |
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FET RF 2CH 110V 1.03GHZ NI-1230 | ||
VRF157FLMP | Microsemi Corporation | 5000 |
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RF MOSFET N-CHANNEL 50V 4SMD | ||
MRF6VP41KHR5 | NXP USA Inc. | 5000 |
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FET RF 2CH 110V 450MHZ NI1230 | ||
MRF6V14300HR5 | NXP USA Inc. | 5000 |
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FET RF 100V 1.4GHZ NI780 | ||
MRF6VP121KHR5 | NXP USA Inc. | 5000 |
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FET RF 2CH 110V 1.03GHZ NI1230H | ||
MRF6VP121KHSR5 | NXP USA Inc. | 5000 |
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FET RF 2CH 110V 1.03GHZ NI1230H | ||
MRF6VP41KHSR5 | NXP USA Inc. | 5000 |
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FET RF 2CH 110V 450MHZ NI1230S | ||
2731GN-200M | Microsemi Corporation | 5000 |
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FETS RF GAN 150V 2.7-3.1GHZ 55QP | ||
MMRF1314GSR5 | NXP USA Inc. | 5000 |
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TRANS 960-1215MHZ 1000W PEAK 50V | ||
2729GN-270 | Microsemi Corporation | 5000 |
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FET RF N-CH 150V 2.9GHZ 55-QP | ||
3135GN-170M | Microsemi Corporation | 5000 |
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FETS RF GAN 150V 3.1-3.5GHZ 55QP | ||
BLU6H0410L-600P,11 | Ampleon USA Inc. | 5000 |
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RF FET LDMOS 110V 21DB SOT539A | ||
BF5030WH6327XTSA1 | Infineon Technologies | 5000 |
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FET RF 8V 800MHZ SOT343 | ||
MMRF1007HSR5 | NXP USA Inc. | 5000 |
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FET RF 2CH 110V 1.03GHZ NI-1230S | ||
AFV141KGSR5 | NXP USA Inc. | 5000 |
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IC TRANS RF LDMOS | ||
ARF1519 | Microsemi Corporation | 5000 |
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RF PWR MOSFET 1000V 20A DIE | ||
BLS6G2731P-200,117 | Ampleon USA Inc. | 5000 |
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RF FET LDMOS 32V SOM038 | ||
AFV141KHSR5 | NXP USA Inc. | 5000 |
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IC TRANS RF LDMOS |
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