Datasheet | Image | Part Number | Manufacturers | Stock | Quantity | Description |
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BAS116LS-QYL | Nexperia USA Inc. | 5000 |
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BAS116LS-Q/SOD882BD/XSON2 |
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BYG10DHM3_A/I | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE AVALANCHE 200V 1.5A DO214 |
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1N4151W-E3-18 | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE GEN PURP 50V 150MA SOD123 |
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BYG10GHM3_A/H | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE AVALANCHE 400V 1.5A DO214 |
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1N4448WS-E3-18 | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE GEN PURP 75V 150MA SOD323 |
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BYG10GHM3_A/I | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE AVALANCHE 400V 1.5A DO214 |
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1N4448WS-E3-08 | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE GEN PURP 75V 150MA SOD323 |
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BYG10JHM3_A/H | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE AVALANCHE 600V 1.5A DO214 |
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BAV19WS-G RRG | Taiwan Semiconductor Corporation | 5000 |
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DIODE GEN PURP 100V 200MA SOD323 |
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BYG10JHM3_A/I | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE AVALANCHE 600V 1.5A DO214 |
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BAV20WS-G RRG | Taiwan Semiconductor Corporation | 5000 |
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DIODE GEN PURP 150V 200MA SOD323 |
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BYG10KHM3_A/H | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE AVALANCHE 800V 1.5A DO214 |
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BYG10KHM3_A/I | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE AVALANCHE 800V 1.5A DO214 |
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BAV21WS-G RRG | Taiwan Semiconductor Corporation | 5000 |
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DIODE GEN PURP 200V 200MA SOD323 |
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S5PMS-M3/86A | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE GEN PURP 1KV 1.8A TO277A |
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BAV302-TR3 | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE GP 150V 250MA MICROMELF |
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PMEG6010CPASX | Nexperia USA Inc. | 5000 |
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DIODE SCHOTTKY 60V 1A SOT1061 |
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BAS33-TAP | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE GEN PURP 30V 200MA DO35 |
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RS3K V6G | Taiwan Semiconductor Corporation | 5000 |
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DIODE GEN PURP 800V 3A DO214AB |
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BAS21LSYL | Nexperia USA Inc. | 5000 |
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BAS21LS/SOD882BD/XSON2 |
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