Datasheet | Image | Part Number | Manufacturers | Stock | Quantity | Description |
---|---|---|---|---|---|---|
S1GFL | Rochester Electronics, LLC | 5000 |
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S1GFL - SURFACE GENERAL-PURPOSE | ||
SIDC56D120F6YX1SA1 | Infineon Technologies | 5000 |
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DIODE GEN PURPOSE 1.2KV | ||
GS1KE-TP | Micro Commercial Co | 5000 |
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DIODE GEN PURP 800V 1A DO214AC | ||
SS36-61HE3J_A/I | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE SCHOTTKY 60V 3A SMD | ||
HER601G | Taiwan Semiconductor Corporation | 5000 |
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DIODE GEN PURP 6A 50V R-6 | ||
SFT11GH | Taiwan Semiconductor Corporation | 5000 |
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DIODE GEN PURP 50V 1A TS-1 | ||
BAS21AVD,165 | Rochester Electronics, LLC | 5000 |
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NEXPERIA BAS21AVD - RECTIFIER DI | ||
IDC51D120T6HX7SA1 | Infineon Technologies | 5000 |
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DIODE GEN PURPOSE 1.2KV | ||
VS-96-1026PBF | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE GENERAL PURPOSE TO220 | ||
SS36-7001HE3_A/I | Vishay General Semiconductor - Diodes Division | 5000 |
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DIODE SCHOTTKY 60V 3A SMD | ||
SF43G | Taiwan Semiconductor Corporation | 5000 |
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DIODE GEN PURP 150V 4A DO201AD | ||
UF4002 | DComponents | 5000 |
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UF Rect, 100V, 1.00A, 50ns | ||
IDC40D120T6HX1SA1 | Infineon Technologies | 5000 |
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DIODE GEN PURPOSE 1.2KV | ||
CTLSH1-40M322S BK | Central Semiconductor Corp | 5000 |
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DIODE SCHOTTKY 40V 1A TLM322S | ||
RJU3051TDPP-EJ#T2 | Renesas Electronics America Inc | 5000 |
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DIODE TO-263 | ||
F1T2GH | Taiwan Semiconductor Corporation | 5000 |
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DIODE FAST REC 1A 100V TS-1 | ||
SIDC81D60E6YX1SA1 | Infineon Technologies | 5000 |
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DIODE GEN PURPOSE 600V | ||
US1M-AQ | DComponents | 5000 |
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UF Rect, 1000V, 1.00A, 75ns | ||
CTLSH1-40M322S TR | Central Semiconductor Corp | 5000 |
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DIODE SCHOTTKY 40V 1A TLM322S | ||
RJS6004TDPN-EJ#T2 | Renesas Electronics America Inc | 5000 |
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DIODE SCHOTTKY TO220FP |
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