Datasheet | Image | Part Number | Manufacturers | Stock | Quantity | Description |
---|---|---|---|---|---|---|
SR115HR1G | Taiwan Semiconductor Corporation | 5000 |
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DIODE SCHOTTKY 150V 1A DO204AL | ||
IDK10G65C5XTMA1 | Infineon Technologies | 5000 |
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DIODE SCHOTTKY 650V 10A TO263-2 | ||
MBR5200VP-G1 | Diodes Incorporated | 5000 |
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DIODE SCHOTTKY 200V 5A DO27 | ||
RBQ10B45ATL | Rohm Semiconductor | 5000 |
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DIODE SCHOTTKY CPD | ||
RM 10 | Sanken | 5000 |
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DIODE GEN PURP 400V 1.2A AXIAL | ||
STTH30R04WY | STMicroelectronics | 5000 |
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DIODE GEN PURP 400V 30A DO247 | ||
UF1A R1G | Taiwan Semiconductor Corporation | 5000 |
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DIODE GEN PURP 50V 1A DO204AL | ||
IDK12G65C5XTMA1 | Infineon Technologies | 5000 |
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DIODE SCHOTTKY 650V 12A TO263-2 | ||
MBR5200VPB-E1 | Diodes Incorporated | 5000 |
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DIODE SCHOTTKY 200V 5A DO27 | ||
RF301B6STL | Rohm Semiconductor | 5000 |
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DIODE GEN PURPOSE CPD | ||
RM 10A | Sanken | 5000 |
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DIODE GEN PURP 600V 1.2A AXIAL | ||
UF1AHR1G | Taiwan Semiconductor Corporation | 5000 |
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DIODE GEN PURP 50V 1A DO204AL | ||
IDL02G65C5XUMA1 | Infineon Technologies | 5000 |
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DIODE SCHOTTKY 650V 2A VSON-4 | ||
JAN1N647-1 | Microchip Technology | 5000 |
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DIODE GEN PURP 400V 400MA DO35 | ||
MBR5200VPB-G1 | Diodes Incorporated | 5000 |
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DIODE SCHOTTKY 200V 5A DO27 | ||
RF501B6STL | Rohm Semiconductor | 5000 |
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DIODE GEN PURPOSE CPD | ||
RM 10B | Sanken | 5000 |
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DIODE GEN PURP 800V 1.2A AXIAL | ||
UF1B R1G | Taiwan Semiconductor Corporation | 5000 |
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DIODE GEN PURP 100V 1A DO204AL | ||
IDL04G65C5XUMA1 | Infineon Technologies | 5000 |
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DIODE SCHOTTKY 650V 4A VSON-4 | ||
APT10SCD65K | Microchip Technology | 5000 |
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DIODE SILICON 650V 17A TO220 |
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